PART |
Description |
Maker |
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V,VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD Ultra-Low V IGBT with Diode
|
IXYS, Corp. IXYS Corporation
|
IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http:// IXYS[IXYS Corporation]
|
FGA65A3H |
VCE = 650 V, IC = 15 A Trench Field Stop IGBT
|
Sanken electric
|
APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. Advanced Power Technology
|
IXSM40N60 IXSM40N60A IXSH40N60A IXSH40N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH10N100A IXGH10N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH10N60 IXGH10N60A IXGP10N60 IXGP10N60A IXGA10N6 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXSM25N100 IXSM25N100A IXSH25N100A IXSH25N100 |
Low VCE(sat) High Speed IGBT(VCE(sat)涓?.0V??????缂??????烘?搴??) Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
GP401DDS18 |
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
|
DYNEX[Dynex Semiconductor] Dynex Semiconductor, Ltd.
|
IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|